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DS: Fachverband Dünne Schichten

DS 20: Poster

DS 20.32: Poster

Donnerstag, 12. März 2026, 18:30–20:30, P2

Optimization of Reactive Ion Etching processes with Optical Emission Spectroscopy — •Daniel Breuer, Bich Nguyen, Teresa Weßels, and Markus Kaiser — Helmholtz Nano Facility, Forschungszentrum Jülich, Jülich, Germany

In modern technology, devices on the scale of micro- to nanometers play an important role. In the fabrication of those devices, the dry etching process is essential to structure them. Hereby the reactive ion etching technology has been established due to its very selective and anisotropic etching. To achieve reproducible results, process control is crucial. For this purpose, optical emission spectroscopy (OES) is employed to observe the spectra of the plasma during the process. Here, OES is used to ensure thorough cleaning of the RIE chamber after etching by defining the spectra of a clean chamber. Parameters, e.g. etching gas and time, are investigated with respect to their effect on chamber cleanliness. Finally, suggestions for a rigorous cleaning procedure are given. In addition, the endpoint detection is examined on a Si wafer with 200 nm SiN. Using OES, we aim to stop the plasma immediately when the SiN is etched through to prevent damage to the Si. We implement an endpoint detection by observing the characteristic line of the CN molecule, which is a typical product of the chemical etch reaction. The effects of various system parameters on the plasma, e.g. coupled power, chamber pressure and gas flow, are studied, as well as endpoint detection settings. In conclusion, a precise analysis of the plasma via OES allows us to specifically control the etching process.

Keywords: Reactive Ion Etching; Optical Emission Spectroscopy