Dresden 2026 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 20: Poster
DS 20.33: Poster
Donnerstag, 12. März 2026, 18:30–20:30, P2
Optimizing Erbium Luminescence in Silicon Nitride for Integrated Photonics via Oxygen Codoping and Thermal Annealing — •Felix Mania1, Sören Lerner1, Jiale Sun2, Zheru Qiu2, Xinru Ji2, Tobias Kippenberg2, and Carsten Ronning1 — 1Friedrich-Schiller Universität, Helmholtzweg 3, 07743 Jena, Germany — 2École Polytechnique Fédérale de Lausanne, Switzerland
Erbium-doped fiber amplifiers revolutionized long-haul optical communications, thereby establishing erbium ions as promising candidates for amplification in integrated circuits. However, their practical application in integrated photonics is currently limited by low luminescence efficiency. In this study, we utilize ion implantation into ultralow-loss silicon nitride (Si3N4) and investigate the influence of oxygen codoping and thermal annealing on the formation of Er-O complexes, thereby modifying the local crystal field of the erbium ions within the host matrix. Specifically, we examine the effects of varying oxygen doping concentration and annealing temperature via photoluminescence and lifetime measurements. These findings provide a critical optimization strategy for CMOS-compatible erbium-based emitters essential for future photonic integration.
Keywords: photoluminescence; erbium; silicon nitride; codoping; thermal annealing