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DS: Fachverband Dünne Schichten
DS 20: Poster
DS 20.5: Poster
Donnerstag, 12. März 2026, 18:30–20:30, P2
Enhanced Ferroelectric Behavior in NH4Cl-Doped SnO2/Perovskite Multilayer Memristors — •Katerina Maskanaki1, Evangelos Evangelou1, and Anastasia Soultati2,3 — 1Department of Physics, University of Ioannina, 45110 Ioannina, Greece — 2Institute of Nanoscience and Nanotechnology (INN), National Center for Scientific Research Demokritos, 15341 Agia Paraskevi, Athens, Greece — 3Department of Electrical & Computer Engineering, Hellenic Mediterranean University (HMU), Heraklion 71410, Crete, Greece
Perovskite-based materials have emerged as promising candidates for neuromorphic computing due to their diverse conduction mechanisms and tunable electronic properties. This study is focused on the development and characterization of multi-layered memristors with the structure ITO/SnO2:NH4Cl/RbCsMAFAPbI3/P3HT/Al. A reference device employing a pristine SnO2 layer was also fabricated to compare the memristive behavior to the modified devices incorporating an NH4Cl-doped SnO2 nanocomposite layer in various concentrations. All configurations exhibited stable memristive switching; however, the NH4Cl-modified devices demonstrated significantly enhanced ferroelectric behavior, achieving endurance over 200 switching cycles and robust data retention exceeding 10^3 s. The high reproducibility and scalability of these perovskite memristors highlight their strong potential for next-generation neuromorphic and memory applications.
Keywords: memristors; halide perovskite; ferroelectric behavior; electrical characterization; metal oxide