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DS: Fachverband Dünne Schichten
DS 20: Poster
DS 20.8: Poster
Donnerstag, 12. März 2026, 18:30–20:30, P2
Ion slicing of gallium phosphide — •Otto Arnold1,2,3, Tobias Bucher1, Katsuya Tanaka1,2,3,4, Muyi Yang1,2,3,4, Carsten Ronning1, and Isabelle Staude1,2,3,4 — 1Institute of Solid-State Physics, Friedrich Schiller University Jena, 07743 Jena, Germany — 2Abbe Center of Photonics, Friedrich Schiller University Jena, 07745 Jena, Germany — 3Institute of Applied Physics, Friedrich Schiller University Jena, 07745 Jena, Germany — 4Max Planck School of Photonics, Germany
Gallium phosphide (GaP) has unique non-linear and quantum optical properties, such as second harmonic generation and spontaneous parametric down-conversion. For integrated optics, preparing the single crystalline GaP on a low reflective index material would be useful, as the reflective index scales with the mode confinement of the enhanced near-field. So far, GaP thin films are grown epitaxially or with MOCVD, which are both expensive and complicated. An alternative approach is ion slicing, where a helium-irradiated GaP is bound to a borosilicate glass. We fabricated high quality GaP thin-film in (100) and (110) crystal orientation on glass, with a thickness of 760 (40) nm. Energy-dispersive X-ray spectroscopy (EDX) and Rutherford backscattering spectrometry (RBS) characterization of the fabricated thin-films allow us to further optimize the irradiation profile and bonding parameters towards best optical performance for further nanofabrication of resonant meta-surfaces operating in the visible and near-infrared.
Keywords: Ion slicing; Gallium Phosphide; second harmonic generation; meta-surface; Spontaneous parametric down-conversion