DS 4: Thin Film Properties II
Montag, 9. März 2026, 16:30–18:15, REC/C213
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16:30 |
DS 4.1 |
Epitaxial Growth and Structural Characterization of Non-centrosymmetric B20-PtAl Thin Films — •Ayusa Aparupa Biswal, Darius Pohl, Bernd Rellinghaus, Edouard Lesne, and Claudia Felser
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16:45 |
DS 4.2 |
high-quality Bi2Te3 TI thin films on [0001]-oriented sapphire substrate grown by MBE — •Ismet Gelen, Ahmet Yagmur, Luke Benson, and Satoshi Sasaki
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17:00 |
DS 4.3 |
exploring ehalgogenide ABX3 perovskites: challenges and insights from physical vapor deposition — •Sebastian Zimmermann, Roland Scheer, and Torsten Hölscher
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17:15 |
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15 min. break
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17:30 |
DS 4.4 |
Molecule Adsorption at Me-polar and N-polar Sc(x)Ga(1- x)N Surfaces Investigated by Photo Electron Spectroscopy — •Fabian Ullmann and Stefan Krischok
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17:45 |
DS 4.5 |
Molecular Beam Epitaxy of ferrimagnetic Mn4N — •Adriano Notarangelo, Michael Hanke, Lutz Geelhaar, Oliver Brandt, and Philipp M. John
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18:00 |
DS 4.6 |
Investigations of cubic boron nitride nucleation using in situ RHEED during pulsed laser deposition — •Falko Jahn, Laura Dienelt und Steffen Weißmantel
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