Dresden 2026 – scientific programme
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DS: Fachverband Dünne Schichten
DS 6: Thin Oxides and Oxide Layers
DS 6.3: Talk
Tuesday, March 10, 2026, 10:15–10:30, REC/C213
Memristive behaviour in Nickelate Perovskite thin films — •Foelke Janssen1,2 and Beatriz Noheda1,2 — 1Zernike Institute for Advanced Materials, University of Groningen, The Netherlands — 2Groningen Cognitive Systems and Materials Center (CogniGron), University of Groningen, The Netherlands
Memristive devices can adopt multiple resistance states depending on the history of the electric signal applied, emulating the basic behavior of synapses and neurons. They hold great promise as low energy consumption devices for in-memory and brain-inspired computing. Materials that undergo a metal-to-insulator phase transition (MIT) are interesting as volatile memristors and can also be used as neuristors by being the active component in self-oscillating circuits. Rare-earth (RE) nickelates (RENiO3) display a MIT at temperatures that can be tuned by changing the RE cations, the strain state, the film thickness or the oxygen vacancy content. Compared to other transition-metal oxides, nickelates are especially interesting as memristive devices due to the robustness of the perovskite structure under intense local heating. In this work, we demonstrate that nickelates can also be used to mimic short term memory in synapses via multilevel resistance states that can be achieved in SmNiO3 thin film structures upon voltage pulsing, harnessing the metal-insulator phase transition, without involving ionic transport. Furthermore, we also demonstrate SmNiO3 as a neuron and discuss the mechanisms behind both devices.
Keywords: Nickelates; Metal-to-Insulator Transition; Memrisitve devices; Artificial Intelligence