Dresden 2026 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 6: Thin Oxides and Oxide Layers

DS 6.4: Vortrag

Dienstag, 10. März 2026, 10:45–11:00, REC/C213

Structure and optical properties of Ga2O3 thin films deposited by reactive and non-reactive sputtering — •Marcell Gajdics, Ildikó Cora, Dániel Zámbó, Zsolt Endre Horváth, Miklós Serényi, and Béla Pécz — Institute for Technical Physics and Materials Science, HUN-REN Centre for Energy Research, H-1121 Budapest, Hungary

Ga2O3, as an ultrawide bandgap semiconductor has numerous potential applications in the field of optoelectronics and high-power electronics. Gallium oxide thin films can be grown by a variety of methods, among which radio frequency sputtering is a commonly used technique. In most cases, a ceramic Ga2O3 target is used for the sputter deposition of Ga2O3. In our work, we present an alternative method, i.e. reactive sputtering of a liquid Ga target. We have shown that by using this technique, layers close to the ideal stoichiometry can be deposited with higher deposition rates than by using a Ga2O3 target. The optical properties (e.g. refractive index) were studied as a function of the oxygen concentration in the films. Post-deposition annealing experiments were also performed on the amorphous as-deposited layers to study the annealing-induced structural and optical changes. It was found that as a first step of crystallization γ-Ga2O3 phase was formed and the thermodynamically stable β-Ga2O3 appeared only at higher temperatures. The photoluminescence emission and the optical bandgap were also measured at different annealing temperatures and the results were correlated with the structural properties.

Keywords: gallium oxide; thin film; heat treatment; phase transformation