Dresden 2026 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 9: Thin Film Properties III: Oxides
DS 9.4: Vortrag
Dienstag, 10. März 2026, 14:45–15:00, REC/C213
Room-temperature H2 gas sensing in ultra-thin SnO2 films grown via atomic layer deposition — •Rudi Tschammer1, Dominic Guttmann1, Carlo Tiebe2, Karsten Henkel1, Carlos Morales1, and Jan Ingo Flege1 — 1Applied Physics and Semiconductor Spectroscopy, BTU Cottbus-Senftenberg, Cottbus, Germany — 2Bundesanstalt für Materialforschung und -prüfung (BAM), Berlin, Germany
Transitioning to an energy system based entirely on renewable energy sources requires long-term energy storage utilizing energy vectors such as hydrogen (H2). Given its high diffusivity, broad explosive range, and low ignition energy, the adoption of H2 requires safety systems along the hydrogen value chain. Therefore, there is a need for sensitive, specific and selective conductometric H2 sensors operating at room temperature (RT) and compatible with complementary metal-oxide semiconductor (CMOS) technology. Earlier work by our group investigated ultra-thin cerium oxide films grown by atomic layer deposition (ALD) and demonstrated H2 sensing at RT. This performance was due to the abundant defects present in the films. Building on these results, we present a comprehensive investigation of ALD-grown tin oxide (SnO2), a widely researched metal oxide for H2 gas sensing. Using in-situ X-ray photoelectron spectroscopy (XPS), we observe a distinct dependence of defect concentration on film thickness and oxidant. Ex-situ H2/air gas sensing measurements and near-ambient pressure XPS further link film properties and sensing behavior. These findings pave the way for novel RT H2 gas sensors based on ALD technology.
Keywords: Tin oxide; Atomic Layer Deposition (ALD); X-ray photoelectron spectroscopy (XPS); Spectroscopic ellipsometry (SE)