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FM: Fachverband Funktionsmaterialien
FM 12: German-French Focus Session: Materials Research in Polar Oxides – From Domain Engineering to Photonic and Electronic Devices I
FM 12.9: Vortrag
Mittwoch, 11. März 2026, 12:15–12:30, BEY/0138
Integration of imprint-free and low coercivity ferroelectric BaTiO3 thin films on silicon — Jingtian Zhao1,2, Majid Ahmadi1,2, Beatriz Noheda1,2, and •Martin F. Sarott1,2 — 1Zernike Institute for Advanced Materials, University of Groningen, The Netherlands — 2Groningen Cognitive Systems and Materials Center (CogniGron), University of Groningen, The Netherlands
Highly-crystalline ferroelectric oxides integrated on Si hold great promise for energy-efficient memory and logic technologies. Exploiting epitaxial strain engineering in these materials is, however, severely hampered on Si, where the large structural mismatch often results in an inferior interfacial quality and causes a degradation of the ferroelectric switching characteristics. In this work, we present the growth of single-crystalline BaTiO3 thin films on Si, exhibiting imprint-free switching, low coercivity, high remanent polarization, and no fatigue for over 1010 switching cycles. We accomplish this via the insertion of a SrSn1-xTixO3 layer on SrTiO3-buffered Si. This layer serves as a pseudo substrate that alleviates the thermal strain that the Si substrates imposes on the BaTiO3 layer, while simultaneously providing moderate compressive strain that stabilizes a pure out-of-plane polarization. Thus, our work paves the way toward the fabrication of Si-compatible, low-power-consuming ferroelectric devices for non-volatile memory applications.
Keywords: BaTiO3; Si-compatible; epitaxy; thin films; ferroelectric