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FM: Fachverband Funktionsmaterialien
FM 18: German-French Focus Session: (Anti)ferroic states – ferroelectrics, ferroelastics and antiferroelectrics II
FM 18.5: Vortrag
Donnerstag, 12. März 2026, 11:45–12:00, BEY/0138
Evidence of ferroelectricity in epitaxially strained tungsten trioxide thin films — •Nives Strkalj1,2, Zhuotong Sun1, Ming Xiao1, Ziyi Yuan1, Xuan T. Nguyen1, Simon M. Fairclough1, Caterina Ducati1, Giuliana Di Martino1, and Judith L. MacManus-Driscoll1 — 1University of Cambridge, UK — 2Institute of Physics, Zagreb, Croatia
Ferroelectric films offer a promising path to faster, more energy-efficient CMOS technologies. Here, we report the deposition of epitaxial tungsten trioxide films at temperatures below 400°C using atmospheric pressure spatial chemical vapour deposition. In these films, epitaxial strain imposed by the substrate promotes the formation of the low-temperature polar phase at room temperatures, evidenced by x-ray diffraction, scanning transmission electron microscopy, piezoresponse force measurements, and Raman spectroscopy. Exploring ferroelectricity in ultrathin tungsten trioxide films could provide a new platform for polarization-controlled electronic and optical applications.
Keywords: ferroelectricity; nanoscale; thin films; epitaxial strain; tungsten trioxide