Dresden 2026 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 10: 2D Materials II – Electronic and transport properties (joint session HL/TT)
HL 10.4: Vortrag
Montag, 9. März 2026, 15:45–16:00, POT/0081
Temperature Dependent Electrical Transport in Thin SnSe2 — •Lars Thole1, Aarti Lakhara2, Preeti A. Bhobe2, and Rolf J. Haug1 — 1Institut für Festkörperphysik, Leibniz Universität Hannover, 30167 Hannover, Germany — 2Department of Physics, Indian Institute of Technology Indore, Khandwa Road, Indore, Simrol, 453552, India
The two-dimensional material SnSe2 shows special temperature dependent behavior [1], which has not been understood to its full capacity as of now.
We fabricated thin samples of SnSe2 and investigated its electrical transport behavior in regards to its temperature dependence [2]. These samples show a metal-insulator transition with a metallic state for higher temperatures. The low-temperature transport regime is dominated by variable-range hopping. Additionally, the influence of defect states in these samples is investigated by looking at the thickness dependence for different samples [3].
[1] C. Guo, et al., Appl. Phys. Lett. 109, 203104 (2016).
[2] A. Lakhara, L. Thole, R. J. Haug, and P. Bhobe. arXiv: 2507.14536 (2025).
[3] A. Lakhara, L. Thole, R. J. Haug, and P. Bhobe. Phys. Rev. B 112, 235401 (2025).
Keywords: 2D materials; electrical transport; transition metal dichalcogenides