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HL: Fachverband Halbleiterphysik

HL 12: Heterostructures, Interfaces and Surfaces: Photonics

HL 12.3: Vortrag

Montag, 9. März 2026, 17:15–17:30, POT/0051

InGaN/GaN nanowire arrays for photoelectrochemical biosensors — •Hannah Nell, Genrietta Steingelb, Rudolfo Hötzel, Ruben Neelissen, Stephan Figge, Tim Grieb, and Martin Eickhoff — Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany

Group III-nitride materials are known for their stability under physiological conditions, making them promising candidates for use as electrochemical biosensors [1]. In this work, we analyse the simultaneous detection by photoluminescence (PL) and photocurrent measurements of InGaN/GaN nanowire (NW) arrays, enabling sensitive and selective sensing of redox-active biomolecules. However, the performance of the NW photoelectrode is constrained by non-radiative surface recombination of photogenerated carriers at the semiconductor-electrolyte interface, leading to irreversible photooxidation of the NW surface, mainly driven by non-passivated surface states. The deposition of ultra-thin metal oxide films is a possibility to suppress such effects. The influence of TiO2 as a surface coating on the sensor properties was analysed by photoelectrochemical characterisation, demonstrating how surface modifications can affect the sensor performance in biochemical environments. [1] G. Steinhoff, et al., Appl. Phys. Lett. 83, 177 (2003)

Keywords: InGaN/GaN; Nanowires; Biosensor; ultra-thin metal oxide films