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HL: Fachverband Halbleiterphysik
HL 16: Focus Session: Quantum Emitters in 2D Semiconductors
HL 16.4: Hauptvortrag
Dienstag, 10. März 2026, 11:15–11:45, POT/0081
Polarization dynamics of isolated defects in hexagonal boron nitride — Serkan Paçal1, Çağlar Samaner1, Furkan Ağlarci1, Ömer S. Tapşin1, and •Serkan Ateş1,2 — 1Department of Physics, Izmir Institute of Technology, Izmir, Turkey — 2Faculty of Engineering and Natural Science, Sabanci University, Istanbul, Turkey
Single-photon sources (SPSs) are indispensable for quantum information technologies like Quantum Key Distribution. The practical success of these applications critically depends on the high purity and long-term stability of the emitted light’s polarization state, which serves as the information-carrying quantum bit (qubit). Understanding and controlling polarization dynamics, therefore, presents a universal challenge for establishing reliable solid-state quantum interfaces. We propose using hexagonal Boron Nitride (hBN) defect centers as a promising new platform for SPSs exhibiting strong, stable single-photon emission at room temperature, making it an ideal model system. In this work, we specifically investigate the polarization properties of hBN defect centers. We analyze the dynamics and temperature dependence of the polarization degree, focusing on the influence of electron-phonon interactions. Our results offer crucial insights that enable the development of targeted strategies to enhance the polarization stability of single-photon emitters, thereby facilitating more robust quantum optical systems.
Keywords: single-photon sources; hexagonal boron nitride; polarization dynamics