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HL: Fachverband Halbleiterphysik
HL 17: Quantum Dots and Wires: Rings, Wires and Transport
HL 17.1: Vortrag
Dienstag, 10. März 2026, 09:30–09:45, POT/0251
Growth of hexagonal Silicon Germanium quantum rings — •Marvin Marco Jansen1, Mette F. Schouten1, Denny Lamon1, Wouter H.J. Peeters1, Marcel A. Verheijen1,2, and Erik P.A.M. Bakkers1 — 1Department of Applied Physics, Eindhoven University of Technology, Groene Loper 19, 5612AP Eindhoven, The Netherlands — 2Eurofins Materials Science BV, High Tech Campus 11, 5656 AE Eindhoven, The Netherlands
Developing a silicon-based laser represents a key step toward commercially viable photonic circuits. A promising route is the recently discovered hexagonal silicon germanium (hex-SiGe) grown as shells around gallium arsenide (GaAs) nanowires (NWs), which has demonstrated efficient direct band-gap emission. In addition, type-I band alignment was demonstrated in hex-SiGe/Ge quantum wells (QWs), pushing the system closer to lasing. Theory predicts that combining hexagonal/cubic Ge(Si) QWs could further enhance optical performance. Here, we investigate the growth of hex-SiGe/Ge QWs on GaAs NWs that alternate between wurtzite (WZ) and zinc blende (ZB) crystal phases, forming ring-shaped hexagonal Ge QWs. These quantum rings feature two types of confinement: crystal-phase-induced axial confinement and radially controlled alloy composition. We explore several different WZ/ZB superlattice designs and TEM analysis confirms successful integration of hexagonal/cubic SiGe alloys and SiGe/Ge QW shells on the designed superlattices. Our results establish crystal-phase superlattice NWs as a promising platform realizing hex-Ge quantum rings and marking progress towards a hex-SiGe laser.
Keywords: SiGe; Nanowire; Crystal phase; Quantum well; Quantum ring