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HL: Fachverband Halbleiterphysik

HL 18: Nanomechanical systems (joint session HL/TT)

HL 18.4: Vortrag

Dienstag, 10. März 2026, 10:45–11:00, POT/0051

Optimization of Faraday Cage Angled Etching and Its Application Prospects in Silicon Carbide — •Wuzheng Ge^1,2, Ciaran Fowley¹, Jens Zscharschuch¹, Claudia Neisser¹, Artur Erbe^1,2, Philipp Bredol³, Felix David³, and Eva Weig³ — ¹Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany — ²Dresden University of Technology, Faculty of Electrical and Computer Engineering, 01069 Dresden, Germany — ³Technical University of Munich, Chair of Nano and Quantum Sensors, 85748 Munich, Germany

This work presents the optimization of a Faraday Cage Angled Etching (FCAE) approach for ICP-RIE. By reshaping the plasma potential through the cage's mesh geometry, FCAE steers ions along the cage-wall normal, enabling controllable ion incidence angles. Reproducible 3D triangular cross-section structures were demonstrated on silicon, confirming the effectiveness of ion-direction tuning. The results were also applied to silicon carbide nanomechanical resonators. The enhanced directional ion flux enables direct fabrication of free-standing, stress-free structures in bulk, undoped SiC. This capability offers new pathways for advanced SiC-based MEMS.

Keywords: FCAE; MEMS; Silicon Carbide; Free-Standing Structures