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HL: Fachverband Halbleiterphysik
HL 18: Nanomechanical systems (joint session HL/TT)
HL 18.6: Vortrag
Dienstag, 10. März 2026, 11:30–11:45, POT/0051
Dry processing of 3C-silicon carbide nanostring resonators — •Felix David1,2,3, Yannick Klaß1, Philipp Bredol1,2,3, and Eva Weig1,2,3 — 1Technische Universität München, School of Computation, Information and Technology, Garching, Germany — 2Technische Universität München, Zentrum für QuantumEngineering (ZQE), Garching, Germany — 3Munich Center for Quantum Science and Technology (MCQST), München, Germany
We fabricate string resonators from strongly stressed 3C-silicon carbide (SiC) grown on a silicon substrate. In conventional fabrication processes, electron-beam lithography with PMMA is employed to define a metallic hard mask for the subsequent dry etching step via a liftoff process. This requires some wet-chemical process steps, such as HF etching and metal removal, which can destroy samples. Here, we describe an alternative process that avoids all wet-chemical process steps, enabling superior quality. It involves the use of a negative electron-beam resist as an etch mask, as well as the completely reactive-ion etching-based release of the nanostrings. The dry-processed nanostrings can be fabricated with a high yield and exhibit high mechanical quality factors at room temperature. Due to its high reliability, combined with high process speed, it also allows for quick adaptation to new projects, such as multilayer and hybrid mechanical systems.
Keywords: Nanomechanics; Silicon Carbide (SiC); Nanofabrication