Dresden 2026 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 20: Poster I
HL 20.13: Poster
Dienstag, 10. März 2026, 18:00–20:00, P1
Raman polarization switching in CrSBr — Priyanka Mondal1, Daria Markina1, •Lennard Hopf1, Lukas Krelle1, Sai Shradha1, Julian Klein2, Mikhail Glazov3, Iann Gerber4, Kevin Hagmann1, Regine v. Klitzing1, Kseniia Mosina5, Zdenek Sofer5, and Bernhard Urbaszek1 — 1Institute for Condensed Matter Physics, TU Darmstadt — 2Department of Materials Science and Engineering, Massachusetts Institute of Technology — 3St. Petersburg, Russia — 4Université de Toulouse, INSA-CNRS-UPS, LPCNO — 5Department of Inorganic Chemistry, University of Chemistry and Technology Prague
In recent years, few-dimensional nanomaterials have sparked significant interest within the solid-state research community due to their novel properties and possible applications in quantum technologies. Layered CrSBr has attracted particular interest due to its quasi 1D nature, strong electron-phonon interaction and air-stability. This work probes the optical anisotropy using polarization resolved photoluminescence and Raman spectroscopy on mono and few-layer CrSBr. These techniques are sensitive to the crystal orientation and reveal the intricate dependence of phonon polarization on excitation energy. Additionally, a clear thickness dependence of the electronic and vibrational properties is found. These results shed light on the complex electron-phonon and photon-phonon interactions in CrSBr opening new avenues for future application in optoelectronic devices.
Keywords: CrSBr; Raman Spectroscopy; Photoluminescence; Optical anisotropy