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HL: Fachverband Halbleiterphysik

HL 20: Poster I

HL 20.14: Poster

Dienstag, 10. März 2026, 18:00–20:00, P1

Tuning carrier type and electrical properties of 2D alloy transistion metal dichalcogenides — •Axel Printschler, Md Tarik Hossain, Nhat Lam Duong, Julian Picker, Rahul Sharma, Christof Neumann, Muhammad Sufyan Ramzan, Caterina Cocchi, and Andrey Turchanin — Friedrich Schiller University Jena, Germany

Two-dimensional (2D) transition metal dichalcogenide (TMD) alloys offer a powerful platform for engineering material properties beyond the limitations of their constituents. Controlling the electronic characteristics of TMDs is crucial for the development of advanced electronic and optoelectronic devices and functional circuitry. This study focuses on the electronic properties of monolayer (V_xW_yMo_1−x−y)S₂ alloys synthesized via a liquid-precursor-based chemical vapor deposition (CVD) approach. We investigate the charge transport in these materials using field-effect transistor (FET) devices. Our electrical measurements demonstrate a controlled transition from n-type to p-type semiconducting behavior, culminating in a metallic state for high vanadium concentrations. This change is supported by density functional theory (DFT) calculations. The tunability, directly correlated with the alloy composition, provides a reliable strategy for tailoring the electronic character of 2D TMDs and underscores their significant potential for application in next-generation electronic devices.

Keywords: TMDs; FETs; 2D alloys