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HL: Fachverband Halbleiterphysik
HL 20: Poster I
HL 20.16: Poster
Dienstag, 10. März 2026, 18:00–20:00, P1
Unconventional Nanopatterning of 2D Materials for Future Nanoelectronics — •Tawat Chen1,2, Poonam Borhade3, Ya-Ping Hsieh4, and Mario Hofmann1 — 1Department of Physics, National Taiwan University, Taipei, 10617 Taiwan — 2Institute of Solid State Physics, Friedrich Schiller University Jena, Helmholtzweg 3, 07743 Jena, Germany — 3Institute of Physics, Academia Sinica, Taipei, 10617 Taiwan — 4Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617 Taiwan
Two-dimensional (2D) materials offer a promising pathway to surpass the physical scaling limits of silicon-based electronics in the post-Moore era. However, fabricating high-resolution nanofeatures on these materials using conventional photolithography is constrained by Rayleigh's diffraction limit and escalating processing costs. In this work, we demonstrate nanopatterning techniques that overcome these limitations. First, we utilize a self-expansion double patterning (SEDP) process to generate nanometer-scale features through a self-limiting, temperature-controlled oxidation mechanism, enabling the fabrication of graphene nanoribbons with precise control. Second, to achieve high-density patterning without standard lithography, we investigate the formation of porous anodic aluminum oxide (AAO) via anodization, successfully creating porous arrays with a diameter of 37 nm. Finally, we discuss the physical mechanisms governing these formation processes and their potential for the scalable, high-throughput fabrication of next-generation 2D material devices.
Keywords: Photolithography; Nanopatterning; Self-Expansion Double Patterning (SEDP); Porous-Type anodic aluminum oxide