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HL: Fachverband Halbleiterphysik

HL 20: Poster I

HL 20.1: Poster

Dienstag, 10. März 2026, 18:00–20:00, P1

Defect-Mediated Electronic Reconstruction in Li-TFSI-Passivated Layered InI Crystals — •Abdulsalam Aji Suleiman^{1, 2}, Ali Karatutlu^{1, 3}, and Aydan Yeltik⁴ — ¹Department of Engineering Fundamental Sciences, Sivas University of Science and Technology, Sivas 58000, Türkiye — ²Sivas Cumhuriyet University Nanophotonics Application and Research Center (CÜNAM), Sivas 58140, Türkiye — ³Institute of Materials Science Nanotechnology, National Nanotechnology Research Center (UNAM), Bilkent University, Ankara 06800, Türkiye — ⁴Department of Material Science and Nanotechnology Engineering, TOBB University of Economics and Technology, Ankara 06560, Türkiye

Layered indium iodide (InI) is a van-der-Waals semiconductor whose bandgap (1.6-2.8 eV) enables strong light-matter coupling but suffers from iodine-vacancy defects that limit stability. Surface passivation with lithium bis(trifluoromethanesulfonyl)imide (Li-TFSI) modifies near-surface electrostatics and bonding, improving optical and transport properties. Photoluminescence shows stronger emission and longer carrier lifetimes, consistent with reduced non-radiative recombination. Soft-X-ray absorption spectroscopy at the HESEB beamline probes F, N, O, C K-edges and I M4,5-edges, revealing how TFSI-ions coordination alters In-I bonding and orbital hybridization. These results link chemical passivation and defect energetics, outlining a route to stable halide-based optoelectronic devices.

Keywords: Layered halide semiconductors; Defect passivation; Electronic reconstruction; Photoluminescence dynamics; Surface and interface spectroscopy