Dresden 2026 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 20: Poster I
HL 20.21: Poster
Dienstag, 10. März 2026, 18:00–20:00, P1
Optical Properties of a Transition-metal Dichalcogenide - ZnO Nanowire Field-effect Transistor — •Yashvi Bulsara1, Maximilian Tomoscheit1, Omid Ghaebi1, Edwin Eobaldt1, Carsten Ronning1, and Giancarlo Soavi1,2 — 1Institute of Solid State Physics, University of Jena — 2Abbe Center of Photonics, University of Jena
Transition-metal dichalcogenide (TMD) monolayers combined with zinc-oxide (ZnO) nanowires (NW) represent a promising platform for electrically tunable nanophotonic devices. ZnO NWs can be used as nanoscale lasers, supporting waveguiding, field amplification and being the gain medium at the same time. A further major step towards the success and broad applicability of NW lasers, is the possibility to actively tune their laser properties via external stimuli, such as the piezo-electric effect[1]. Recently, we have demonstrated that coupling of ZnO NWs to monolayer TMDs leads to an increase of the lasing intensity threshold[2]. Building on this approach, in this poster I will propose a device where the laser emission of a ZnO NW can be electrically tuned by coupling it to a TMD based field-effect transistor.
Besides the main idea and device architecture, I will present preliminary results of device fabrication and characterization.
[1] M. Zapf, Nano Lett., 2017, 17 (11), 6637-6643
[2] E. Eobaldt, Nanoscale, 2022,14, 6822-6829.
Keywords: Nanolasers; TMD Hybrid; Nonlinear Optics; Semiconductors; Nanostructures
