Dresden 2026 – wissenschaftliches Programm

Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 20: Poster I

HL 20.37: Poster

Dienstag, 10. März 2026, 18:00–20:00, P1

Optimized quantum dot emitters for telecom applications: from growth to diode integration — •Tobias Bruggesser, Ponraj Vijayan, Patrick Pietrantuono, Sergej Vollmer, Philipp Noack, Justus A. Unfried, Ulrich Pfister, Michelle Weiss, Simone L. Portalupi, Michael Jetter und Peter Michler — Institut für Halbleiteroptik und Funktionelle Grenzflächen, University of Stuttgart, Germany

Quantum communication and quantum computing applications require a reliable high-purity single photon source. Stranski-Krastanov grown indium arsenide (InAs) quantum dots (QDs) are among the most widely studied candidates, as they possess high purity, brightness, and indistinguishability. When embedded in a GaAs semiconductor matrix, these QDs emit in the near-infrared region (≈ 900 nm), and this can be shifted to the technologically important telecom C-band (1530-1565 nm) by introducing an InGaAs metamorphic buffer (MMB) beneath the QDs to engineer the strain. Our group has previously developed a thin InGaAs MMB based on a non-linear grading of the indium content with a so-called jump-convex-inverse (jci) design. This design is compatible with optical device fabrication, as it can be incorporated into a high-quality 1λ-cavity structure. In this work, we present our approach towards integrating these telecom C-band emitting InAs QDs into a p-i-n diode structure. Our goal is to control the charge carrier environment of the QDs, improve their optical properties, and achieve fine-tuning of the emission energy via the quantum-confined Stark effect.

Keywords: C-band; diode; quantum dot; cavity; metamorphic buffer