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Dresden 2026 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 20: Poster I

HL 20.40: Poster

Tuesday, March 10, 2026, 18:00–20:00, P1

Single-electron charging events on double quantum dots in InSb nanowires — •Kanji Furuta1, Marcus Liebmann1, Fenja Thomsen1, Sasa Gazibegovic2, Diana Car2, Erik Bakkers2, and Markus Morgenstern11II. Phys. Inst. B, RWTH Aachen Univ., Germany — 2Dept. of Appl. Phys., Eindhoven Univ., The Netherlands

As a step to develop a single-electron counting tip for a scanning tunneling microscope, we investigate the charge states of a double quantum dot (DQD) formed in an InSb nanowire by monitoring the current through a floating-gate-coupled sensor quantum dot (QD). The DQD and sensor QD are defined electrostatically by bottom finger gates below hexagonal boron nitride (h-BN) used as the gate dielectric. Time-resolved measurements of the sensor QD current reveal single-electron charging events in the DQD. The asymmetric capacitive coupling of the floating gate allows us to identify which dot acquires an electron. The time traces of the double quantum dot movement of individual electrons are analyzed using full counting statistics, from which the Fano factor and factorial cumulants [1] are extracted.

[1] P. Stegmann et al., Phys. Rev. B 92, 155413 (2015).

Keywords: charge detection; single-electron counting; floating gate; transport

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