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HL: Fachverband Halbleiterphysik

HL 20: Poster I

HL 20.40: Poster

Dienstag, 10. März 2026, 18:00–20:00, P1

Single-electron charging events on double quantum dots in InSb nanowires — •Kanji Furuta¹, Marcus Liebmann¹, Fenja Thomsen¹, Sasa Gazibegovic², Diana Car², Erik Bakkers², and Markus Morgenstern¹ — ¹II. Phys. Inst. B, RWTH Aachen Univ., Germany — ²Dept. of Appl. Phys., Eindhoven Univ., The Netherlands

As a step to develop a single-electron counting tip for a scanning tunneling microscope, we investigate the charge states of a double quantum dot (DQD) formed in an InSb nanowire by monitoring the current through a floating-gate-coupled sensor quantum dot (QD). The DQD and sensor QD are defined electrostatically by bottom finger gates below hexagonal boron nitride (h-BN) used as the gate dielectric. Time-resolved measurements of the sensor QD current reveal single-electron charging events in the DQD. The asymmetric capacitive coupling of the floating gate allows us to identify which dot acquires an electron. The time traces of the double quantum dot movement of individual electrons are analyzed using full counting statistics, from which the Fano factor and factorial cumulants [1] are extracted.

[1] P. Stegmann et al., Phys. Rev. B 92, 155413 (2015).

Keywords: charge detection; single-electron counting; floating gate; transport