Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 20: Poster I

HL 20.44: Poster

Dienstag, 10. März 2026, 18:00–20:00, P1

Characterization of Quantum Dots after Rapid Thermal Annealing in Photonic Layer Structures — •Jasper Ullrich, Severin Krüger, Elias Kersting, and Arne Ludwig — Universitätsstraße 150, Bochum 44801

Rapid thermal annealing (RTA) is an effective post-growth technique for engineering the structural and optoelectronic properties of InGaAs quantum dots (QDs). Short, high-temperature pulses induce controlled interdiffusion that blueshifts the emission wavelength, reduces inhomogeneous broadening, and modifies carrier confinement. In this work, we investigate how specific annealing conditions*temperature, duration, and ambient environment*govern these changes and, in particular, how they influence the oscillator strength of confined excitonic transitions. We expect to show that optimized RTA parameters significantly enhance radiative coupling of QDs, leading to increased oscillator strength and faster emission dynamics. These results would provide a systematic framework for tailoring the optical performance of InGaAs QDs for quantum-light sources, high-speed emitters, and infrared photonic devices.

Keywords: Rapid Thermal Annealing; Quantum Dots; Oscillator strength; photoluminescence Measurment