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HL: Fachverband Halbleiterphysik
HL 20: Poster I
HL 20.50: Poster
Dienstag, 10. März 2026, 18:00–20:00, P1
Low temperature dry etching of InAlAs/InP nanostructures for telecom band single photon sources — •Ankita Choudhary1, Chenxi Ma1, Yiteng Zhang1, Eddy Patrik Rugeramigabo1, Michael Zopf1,2, and Fei Ding1,2 — 1Institut für Festkörperphysik, Leibniz Universität Hannover, Appelstraße 2, 30167 Hannover, Germany — 2Laboratorium für Nano- und Quantenengineering, Leibniz Universität Hannover, Schneiderberg 39, 30167 Hannover, Germany
Epitaxial InP-based quantum dots are excellent candidates for telecom band single photon sources for long-distance quantum communication. Enhancing photon extraction requires integration into photonic nanostructures through high resolution lithography and dry etching. Conventional chlorine-based ICP-RIE etching of InP is challenging due to competing thermal demands that lead to uncontrollable volatilisation of chlorine byproducts at high temperatures, while low-temperature cyclic methods result in defect-rich interfacial layers.Here we demonstrate low temperature chlorine based etching that circumvents byproduct volatilisation and stoichiometric imbalance and eliminates defect layer formation without intermediate chemical treatments. we demonstrate the fabrication of a submicron truncated cone with smooth sidewalls, enhancing spontaneous emission directionality. The fabricated nanostructure shows 3-4 times improved extraction efficiencies compared to as-grown samples, with an NA of 0.7 detection optics. This process provides a robust pathway for fabricating high-quality photonic nanostructures for quantum telecommunications.
Keywords: Quantum dots; Photonic structures; Quantum technology