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HL: Fachverband Halbleiterphysik

HL 20: Poster I

HL 20.59: Poster

Dienstag, 10. März 2026, 18:00–20:00, P1

Spectral wandering of single-photon emitters in the van der Waals material hBN — •Akhilesh Dubey, Robert Schmidt, Johannes Kern, Steffen Michaelis de Vasconcellos, and Rudolf Bratschitsch — Institute of Physics and Center for Nanotechnology, University of Münster, 48149 Münster, Germany

Single-photon emitters in hexagonal boron nitride (hBN) exhibit favorable photophysical optical properties at both room and cryogenic temperatures. However, their performance is limited by various line broadening mechanisms. Here, we present a low-temperature study of the photoluminescence of hBN emitters, investigating linewidth reduction and spectral diffusion at cryogenic temperatures. We believe that the spectral wandering is due to migrating charges in the vicinity of the nanoscale emitter, which could be mitigated by applying an external electric field. Our results essential for developing nanoscale quantum photonic devices based on robust hBN emitters.

Keywords: hexagonal boron nitride; single-photon emitter; spectral diffusion