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HL: Fachverband Halbleiterphysik
HL 24: 2D Materials IV – Emerging materials and properties
HL 24.1: Vortrag
Mittwoch, 11. März 2026, 09:30–09:45, POT/0081
Atomic layer deposition of few-layer 1T-TiS2 and ternary MoTiS2 — •Christian Petersen1,2, Christian Tessarek1,2, Marco Schowalter1,2, Andreas Rosenauer1,2, and Martin Eickhoff1,2 — 1Institute of Solid State Physics, University of Bremen, Otto-Hahn-Allee 1, 28359 Bremen, Germany — 2MAPEX Center for Materials and Processes, University of Bremen, Bibliothekstraße 1, 28359 Bremen, Germany
Theoretical calculations and experimental data concerning electronic and structural properties of 1T-TiS2 are sparse in comparison to other transition metal dichalcogenides (TMD) such as MoS2. The available data is contradicting and attributes 1T-TiS2 a plethora of different properties ranging from a semi-metal like behaviour to different charge density wave phases (2× 2 and √7× √3) and even a band gap of up to 2.5eV. In general, there is a lack of experimental data due to difficulties in synthesis and stabilization of 1T-TiS2 which rapidly oxidizes in ambient conditions.
In this study, plasma-enhanced sub-atomic layer deposition (ALD) [1] in combination with in situ X-ray photoelectron spectroscopy (XPS) is employed to directly study the effects of the growth conditions on the chemical composition of 1T-TiS2 while circumventing the problem of oxidation in ambient. To further characterize the 1T-TiS2 film ex situ, Raman spectroscopy and atomic force microscopy (AFM) is utilized. Additionally, MoTiS2 was synthesized by substitution of ALD cycles of the Ti precursor (TDMAT) by the Mo precursor (BTBMMo).
[1] C. Tessarek et al., 2D Mater. 11, 025031 (2024)
Keywords: Atomic layer deposition (ALD); Transition metal dichalcogenide (TMD); X-ray photoelectron spectroscopy (XPS); TiS$_{2}$