Dresden 2026 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 24: 2D Materials IV – Emerging materials and properties
HL 24.5: Vortrag
Mittwoch, 11. März 2026, 10:30–10:45, POT/0081
Opposite In-Plane Electrical Anisotropy in ZrSe3 and ZrS3 Flakes — •Davin Höllmann1, Lars Thole1, Sonja Locmelis2, and Rolf J. Haug1,3 — 1Institut für Festkörperphysik, Leibniz Universität Hannover, 30167 Hannover, Germany — 2Institut für Anorganische Chemie, Leibniz Universität Hannover, 30167 Hannover, Germany — 3Laboratorium für Nano- und Quantenengineering, Leibniz Universität Hannover, 30167 Hannover, Germany
The anisotropy in form of quasi one-dimensional (1D) chains in transition metal trichalcogenides (TMTCs) makes them stand out compared to other more conventional two-dimensional (2D) materials [1]. Through width-dependent [2] and direct measurements, we investigated the electrical properties of ZrSe3 and ZrS3 flakes, in particular, the influence of the anisotropic effective electron masses [3] in the 2D plane. Flakes with a height of 26 nm were exfoliated from the respective bulk materials grown by a chemical vapour transport method.
Despite their identical quasi 1D layered crystal structure, ZrSe3 and ZrS3 exhibit inverted in-plane electrical anisotropy. While ZrSe3 exhibits the highest conductivity across the 1D chains with an anisotropy ratio of 0.60, ZrS3 is shown to favour electron transport along the 1D chains with a ratio of 1.69. Using DFT, we attribute this to the different chalcogen contributions at the conduction band minimum.
[1] J. O. Island et al., 2D Materials 4, 0220033 (2017)
[2] D. Höllmann et al., ACS Appl. Electron. Mater. 7, 9, 4049-4054
(2025)
[3] Y. Jin et al., Phys. Chem. Chem. Phys. 17, 18665-18669 (2015)
Keywords: Transition Metal Trichalcogenides; Anisotropy; Electrical transport; DFT