Dresden 2026 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 25: Focus Session: Young Semiconductor Forum

HL 25.3: Invited Talk

Wednesday, March 11, 2026, 10:30–11:00, POT/0251

Ferroelectric switching in Mn-doped epitaxial BaTiO₃ films and superlattices on silicon — •Alfredo Blázquez Martínez¹, Valentin Väinö Hevelke^1,2, Ibukun Olaniyan^1,2, Minh-Anh Luong^1,3, Ines Häusler¹, Sven Wiesner¹, Christoph T. Koch⁴, Dong-Jik Kim¹, and Catherine Dubourdieu^1,2 — ¹Helmholtz-Zentrum Berlin fur Materialien und Energie, 14109 Berlin, Germany — ²Freie Universität Berlin, 14195 Berlin, Germany — ³CEMES-CNRS and Université de Toulouse, F-31055 Toulouse, France — ⁴Humboldt-Universität zu Berlin, 12489 Berlin, Germany

The integration of epitaxial ferroelectric oxides on silicon remains a key challenge for realizing energy-efficient and CMOS-compatible nanoelectronic devices. Among these materials, barium titanate (BaTiO₃) is a prototypical perovskite ferroelectric with a high remanent polarization and a low coercive field. Molecular beam epitaxy (MBE) enables the growth of high-quality epitaxial BaTiO₃ on Si, yet these films typically show high leakage currents, which preclude polarization measurements and the realization of functional devices on Si. Here, we demonstrate robust ferroelectric hysteresis in epitaxial BaTiO₃ films grown on p-type Si using Mn doping. The introduction of a suitable amount of Mn suppresses leakage currents by up to seven orders of magnitude. We will then discuss the properties of (Mn-doped BaTiO₃/SrTiO₃)_n superlattices hosting vortex polar textures of a few nanometers in diameter. This work highlights Mn-doping as an effective path to reduce leakage currents in epitaxial BaTiO₃ heterostructures to enable future topotronic devices integrated monolithically on semiconductors.

Keywords: Ferroelectric-semiconductor integration; Epitaxial oxides on silicon; Barium titanate; Leakage currents; Topological polar textures