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HL: Fachverband Halbleiterphysik
HL 25: Focus Session: Young Semiconductor Forum
HL 25.3: Hauptvortrag
Mittwoch, 11. März 2026, 10:30–11:00, POT/0251
Ferroelectric switching in Mn-doped epitaxial BaTiO3 films and superlattices on silicon — •Alfredo Blázquez Martínez1, Valentin Väinö Hevelke1,2, Ibukun Olaniyan1,2, Minh-Anh Luong1,3, Ines Häusler1, Sven Wiesner1, Christoph T. Koch4, Dong-Jik Kim1, and Catherine Dubourdieu1,2 — 1Helmholtz-Zentrum Berlin fur Materialien und Energie, 14109 Berlin, Germany — 2Freie Universität Berlin, 14195 Berlin, Germany — 3CEMES-CNRS and Université de Toulouse, F-31055 Toulouse, France — 4Humboldt-Universität zu Berlin, 12489 Berlin, Germany
The integration of epitaxial ferroelectric oxides on silicon remains a key challenge for realizing energy-efficient and CMOS-compatible nanoelectronic devices. Among these materials, barium titanate (BaTiO3) is a prototypical perovskite ferroelectric with a high remanent polarization and a low coercive field. Molecular beam epitaxy (MBE) enables the growth of high-quality epitaxial BaTiO3 on Si, yet these films typically show high leakage currents, which preclude polarization measurements and the realization of functional devices on Si. Here, we demonstrate robust ferroelectric hysteresis in epitaxial BaTiO3 films grown on p-type Si using Mn doping. The introduction of a suitable amount of Mn suppresses leakage currents by up to seven orders of magnitude. We will then discuss the properties of (Mn-doped BaTiO3/SrTiO3)n superlattices hosting vortex polar textures of a few nanometers in diameter. This work highlights Mn-doping as an effective path to reduce leakage currents in epitaxial BaTiO3 heterostructures to enable future topotronic devices integrated monolithically on semiconductors.
Keywords: Ferroelectric-semiconductor integration; Epitaxial oxides on silicon; Barium titanate; Leakage currents; Topological polar textures