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HL: Fachverband Halbleiterphysik
HL 26: Poster II
HL 26.11: Poster
Wednesday, March 11, 2026, 09:30–11:30, P1
Influence of AlInP(100) Surface Reconstruction on TiO2/III–V Interface Chemistry and Band Alignment — Mohammad Amin Zare Pour1,2, Christian Höhn3, Negin Mogharehabed1, Roel van de Krol3, Thomas Hannappel2, and •Agnieszka Paszuk1 — 1BMFTR Junior Research Group PARASOL, Technische Universität Ilmenau, Germany — 2Fundamentals of Energy Materials, Technische Universität Ilmenau, Germany — 3Institute for Solar Fuels, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Germany
TiO2/III–V heterointerfaces are crucial for photoelectrochemical devices, as their chemistry and band alignment govern photogenerated charge-carrier transfer. The TiO2/InP(100) heterointerface was recently studied using XPS/UPS and ab initio molecular dynamics simulations [Adv. Funct. Mater. 2025, 2506105]. ALD-grown TiO2 on phosphorus-terminated (P-rich) InP(100) shows strong interface-induced band bending, InPOx formation related to the P-rich surface, and Cl incorporation from TiCl4, reflecting precursor-dependent chemistry. Here, we relate these findings to AlInP(100) surfaces prepared with either P-rich or indium-rich termination, as well as with a thin oxide layer. By comparing oxide states and valence-band positions with those of InP, we analyze how surface reconstruction governs the formation and energetic alignment of TiO2/III–V heterointerfaces. These insights highlight how AlInP surface preparation controls the formation and electronic structure of TiO2/III–V interfaces.
Keywords: TiO2/III-V heterointerface; Photoelectron spectroscopy; Atomic layer deposition; Interface chemistry; Photoelectrochemical devices