Dresden 2026 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 26: Poster II

HL 26.12: Poster

Mittwoch, 11. März 2026, 09:30–11:30, P1

Measuring the Temperature Distribution of GaSb Wafers during MBE Growth — •Timo A. Kurschat¹, Sascha R. Valentin¹, Peter Zajac¹, Rainer Krage¹, Arne Ludwig², and Andreas D. Wieck³ — ¹Gesellschaft für Gerätebau mbH, Klönnestr. 99, 44143 Dortmund — ²Arbeitsbereich Epitaxie, Experimentalphysik VI, Ruhr-Universität Bochum, 44801 Bochum — ³ehem. Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, 44801 Bochum

During epitaxial growth the substrate temperature is one of the essential parameters. To obtain high-resolution temperature maps we use a single-lens reflex (SLR) camera with the infrared filter removed. The sensor is sensitive up to a wavelength of about 1 µ m and can therefore be used as a pyrometer. With wafer rotation disabled, temperatures down to T_S=400 ^∘C can be measured. With rotation and a reduced exposure time of 0.25 s images can still be obtained at the growth temperature of T_S=680 ^∘C.

To optimize the temperature distribution, so called washers are used during growth that cover parts of the wafer. With the original washers, the center of our quarter 2" wafers is more than 20 K hotter than the corners. Without a washer the profile inverts. Therefore we designed a new washer which greatly improves the homogeneity.

On the other hand an inhomogeneous temperature profile can be used to optimize growth parameters, which we show with photoluminescence measurements of quantum wells and atomic force microscope images.

Keywords: MBE; GaSb; temperature measurement