Dresden 2026 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 26: Poster II

HL 26.19: Poster

Mittwoch, 11. März 2026, 09:30–11:30, P1

Wavelength-selective, ultraviolet (Mg,Zn)O photodiodes — •Jonas Elz, Holger von Wenckstern, and Marius Grundmann — Leipzig University, Felix Bloch Institute for Solid State Physics, Semiconductor Physics Group, Leipzig, Germany

Ninety-five percent of the UV radiation that reaches the Earth’s surface is in the UVA band (315-400 nm). In order to assess the potential harmful effects of UVA radiation on the human epidermis with compact, wearable devices, semiconductor technology can be used. Magnesium zinc oxide is a suitable material for detectors in such devices because it exhibits a bandgap between 3.3 and 4.8 eV. One photodiode design uses a filter and an active layer with different material compositions to achieve sensitivity in different optical bands [2].

In this study, we use combinatorial pulsed laser deposition to fabricate metal-semiconductor-metal photodiodes that are sensitive to different wavelength ranges. With the same mask system and similar targets as in [3], we achieve multiple compositions of filter and active layers on a single substrate.

[1] von Wenkstern et al. "The (Mg, Zn)O Alloy" in "Handbook of zinc oxide and related materials" pp 257-320
[2] Zhang et al. Appl. Phys. Lett. 108, 243503 (2016)
[3] Thyen et al. J. Vac. Sci. Technol. A 41, 020801 (2023)

Keywords: photodetector; magnesium zinc oxide; pulsed laser deposition; ultraviolet; photodiodes