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HL: Fachverband Halbleiterphysik

HL 26: Poster II

HL 26.22: Poster

Mittwoch, 11. März 2026, 09:30–11:30, P1

Investigation of vertical α-Ga₂O₃/(Al_xGa_1−x)₂O₃ diodes grown by pulsed laser deposition — •Veronika Lunova, Sofie Vogt, Paul Bokemeyer, Holger von Wenckstern, and Marius Grundmann — Universität Leipzig, Felix Bloch Institute for Solid State Physics, Semiconductor Physics Group, Leipzig, Germany

With a bandgap of 5.3 eV and a dielectric breakdown field of 10 MV/cm, α-phase gallium oxide is a promising ultra-wide bandgap semiconductor for high-power electronics [1]. Furthermore, alloying with isostructural α-Al₂O₃ is possible without a miscibility gap and allows for even higher band gaps and electrical breakdown fields [2]. In this work, we present a systematic investigation of vertical Schottky diode structures based on α-(Al_xGa_1−x)₂O₃ thin films grown by pulsed laser deposition (PLD). The heterostructures consist of an undoped α-Ga₂O₃ buffer layer, highly doped intermediate layers, and an (Al_xGa_1−x)₂O₃ layer. Achieving sufficient conductivity in (Al_xGa_1−x)₂O₃ remains a major challenge; thus, we investigate donor activation as a function of aluminum content [3]. The structural quality and electrical properties of the resulting heterostructures were investigated, with focus on the influence of Al incorporation on crystal structure, carrier activation, and vertical transport behavior.

[1] Higashiwaki et al., Appl. Phys. Lett. 100, 013504 (2012).

[2] Hassa et al., J. Phys. D: Appl. Phys. 54 223001 (2021).

[3] Varley et al., Appl. Phys. Lett. 120, 262104 (2022).

Keywords: Aluminum oxide; Gallium oxide; Schottky diode; Vertical diode; Ultra-wide bandgap