Dresden 2026 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 26: Poster II

HL 26.31: Poster

Mittwoch, 11. März 2026, 09:30–11:30, P1

Low-density InAs quantum dots for telecom O-band single-photon emission — •Elias Kersting, Nikolai Spitzer, Hans Georg Babin, Severin Krüger, Phil Julien Badura, and Arne Ludwig — Ruhr-Universität Bochum, EP6 , Bochum, Germany

InAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) are promising candidates for single-photon sources (SPS), particularly for quantum communication. Emission in the telecom O-band (1260 - 1360 nm) is especially desirable due to the low transmission loss in optical fibers. However, conventional Stranski-Krastanov (SK) InAs QDs face challenges in achieving low and well-controlled densities in the range of 0.1- 10 QDs/um^2, as well as in precisely tuning the emission wavelength. We present an alternative approach to address this issue based on local droplet etching (LDE), in which nanoholes in a GaAs matrix are filled with InAs to form QDs. The quantum dot density is defined by the nanohole pattern, enabling precise and scalable control. A strain-reducing layer (SRL) shifts the emission wavelength into the telecom O-band. Homogeneous low-density (~2 QDs/um^2) growth is achieved through shutter-synchronized deposition, making this approach well suited for scalable SPS fabrication. We detail the fabrication method and present structural and optical characterization results.

Keywords: Molecular beam epitaxy (MBE); Local droplet etching (LDE); Quantum Dots; O-band; Photoluminescence