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HL: Fachverband Halbleiterphysik

HL 26: Poster II

HL 26.32: Poster

Mittwoch, 11. März 2026, 09:30–11:30, P1

Effect of TiO₂ thin films on shallow NV centers in co-doped diamond. — •Arthur Witte, Dominic Reinhardt, Peter Schlupp, Holger von Wenckstern, Jan Meijer, and Marius Grundmann — Universität Leipzig, Felix-Bloch Institute for Solid State Physics, Germany

The nitrogen vacancy (NV) center is a color center in diamond, that was proposed as a platform for solid state quantum computing. Essential for this idea is the spin-dependent photoluminescence of the negatively charged NV center, through which an optical spin polarization can be achieved and its relatively long spin coherence time at room temperature. Much research has been done in this direction: to engineer the required negative charge of the NV centers, co-doping of the diamond with donors was developed [1]. Shallow NV centers are subject to surface effects that cause charge instabilities, as well as magnetic and electronic noise. Various surface treatments have been explored to mitigate these effects, including the deposition of a passivation layer on the diamond surface. We combine surface engineering and charge engineering by co-doping and study the effects of these methods on the charge state and T₂ time of shallow NV centers. This is done by sputtering transparent titanium dioxide layers of varying thickness onto a diamond with shallow NV centers in differently co-doped environments. Additionally, effects of annealing of the layer on both the layer itself and the NV properties are discussed.

[1] T. Lühmann, et al. Phys. Status Solidi a 8(1), 1671-1703. (2021)

Keywords: NV center; diamond; titanium oxide