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HL: Fachverband Halbleiterphysik
HL 26: Poster II
HL 26.3: Poster
Mittwoch, 11. März 2026, 09:30–11:30, P1
Impact of Ge-doping on the photoelectrochemical response of cubic (Ga,In)N photoelectrodes — •Sundas Hamid1,2, Marius Wasem1,2, Mario F. Zscherp1,2, Silas A. Jentsch1,2, Jörg Schörmann1,2, Sangam Chatterjee1,2, and Matthias T. Elm1,2 — 1Center for Materials Research, Heinrich-Buff-Ring 16, 35392 Giessen — 2Institute of Experimental Physics I, Heinrich-Buff-Ring 16, 35392 Giessen
(Ga,In)N is a promising electrode material for electrochemical water splitting as the amount of indium determines the band gap of the semiconductor alloy. In this study we focus on the influence of germanium doping on the photoelectrochemical response of cubic (In,Ga)N photoanodes, which were grown by molecular beam epitaxy (MBE). Different methods like open circuit potential, cyclic voltammetry and electrochemical impedance spectroscopy were used to analyse charge carrier transport and the properties of the electrode electrolyte interface, such as flat band potential. The non-intentionally doped samples show a high photocurrent, indicating less recombination and efficient charge separation, while doping decreases the photoelectrochemical response. Despite the lower photocurrent, the doped samples show higher electrochemical stability displaying structural strength and chemical resistance at the interface. The results show that a trade-off between stability and activity needs to be achieved by controlling doping and indium concentration to develop durable and efficient III-nitride photoanodes for solar water splitting.
Keywords: Ge-doped c-InGaN; Electrochemical Impedance Spectroscopy; Water splitting; III-nitrides photoanodes