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HL: Fachverband Halbleiterphysik

HL 26: Poster II

HL 26.45: Poster

Mittwoch, 11. März 2026, 09:30–11:30, P1

Two-color sensitive II-VI wide-bandgap diodes with PbTe quantum dots for visible and infrared detection and emission — •Jakub Gluch¹, Sergij Chusnutdinow¹, Michal Szot^1,2, Piotr Wojnar¹, and Grzegorz Karczewski¹ — ¹Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Poland — ²International Research Center MagTop, 02-668 Warszawa, Poland

We present the results of research on p-n diode working as two-color photodetector, made from combined narrow- and wide-bandgap semiconductors. With the use of molecular beam epitaxy (MBE) we managed to create diode structures (p-ZnTe/( Active Layers - AL )/n-CdTe) with lead telluride (PbTe, 0.32 eV in 300K) quantum dots embedded in cadmium telluride matrix (CdTe, 1.49 eV in 300K). To create quantum dots we first grown 20 alternating layers of PbTe and CdTe on top of p-type layer, which followed by thermal annealing which break down PbTe layers in to dots. We performed current-voltage measurements for the basic characteristics followed by an optical measurements to obtain diode spectral response curves with respect to different temperatures in the visible and infrared ranges (350 - 3500nm in 300K). In photoluminescence measurement we observe emission from PbTe quantum dots. We confirmed junction formation in the diode by electron beam induced current (EBIC) measurements. On cross sections of this structures, we observed formation of double p-n junction at the interface of p-type layer and AL, and AL and n-type layer. Measurements show promising possibilities for creating infrared LED and at the same time photodetector with wide spectrum of detectivity.

Keywords: lead telluride; cadmium telluride; spectral response; quantum dots; electron beam induced current