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HL: Fachverband Halbleiterphysik

HL 26: Poster II

HL 26.46: Poster

Mittwoch, 11. März 2026, 09:30–11:30, P1

Microscopic reverse-bias electroluminescence spectra and spectral images of 850 nm oxide-confined VCSELs during burn-in — •Arndt Jaeger¹, Nikolay Ledentsov Jr.², Sebastian Haberkern¹, Helmut Meinert¹, Alexander Moll¹, Dominik Ölke¹, Ilya E. Titkov², Oleg Yu. Makarov², and Nikolay Ledentsov² — ¹Esslingen University of Applied Sciences, Flandernstrasse 101, 73732 Esslingen, Germany — ²VI Systems GmbH, Hardenbergstrasse 7, 10623 Berlin, Germany

850 nm vertical-cavity surface-emitting lasers (VCSELs) are studied during high-current burn-in operation utilizing both reverse-bias electroluminescence (ReBEL) spectra and spectral images. High-resolution spectral images are generated by means of a confocal scanning optical microscope using interference filters whereas microscopic spectra are obtained with a fiber-coupled sensitive USB spectrometer. Recently unfiltered ReBEL images have proven to be sensitive to operation-induced changes of VCSELs because defect states evolved during high-current stress trigger avalanche breakdown and give rise to ReBEL emission. In particular, local current crowding during high current burn-in leads to spatial distributions of ReBEL emission being characteristic to the aging status and contain spectral portions due to quantum well as well as AlGaAs barrier emissions. In contrast, electroluminescence spectra measured under near flatband conditions exhibit only quantum well emission at 848 nm.

Keywords: vertical-cavity surface-emitting laser; reverse bias electroluminescence; degradation; microscopic imaging