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HL: Fachverband Halbleiterphysik
HL 26: Poster II
HL 26.7: Poster
Mittwoch, 11. März 2026, 09:30–11:30, P1
Optimization of etching processes for quantum well structures to enhance IR emission — •Daniel Janzen1, Peter Zajac1, Sascha R. Valentin2, Arne Ludwig1, and Andreas D. Wieck1 — 1Ruhr-Universität Bochum, Bochum, Germany — 2Gesellschaft für Gerätebau mbH, Klönnestr. 99, 44143 Dortmund
The precise control of etching processes is crucial for the properties of quantum well structures, especially in terms of IR emitter efficiency. This study examines how different etching techniques affect surface quality, defect formation, and electrical properties of the epitaxially grown GaSb layers. A critical aspect is the formation of oxides and metallic antimony, which can lead to leakage currents and short circuits. Through Atomic Force Microscopy (AFM) the influence of etching parameters are investigated. Reducing defect states and optimizing material passivation could contribute to the long-term improvement of emission efficiency. This research bridges materials science and semiconductor physics by discussing strategies to optimize surface states for IR emitters. The findings are relevant not only for quantum optics but also for sensor applications and industrial semiconductor fabrication.
Keywords: GaSb; Etching Processes; Quantum Well Structures; IR Emission; Semiconductor Physics