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HL: Fachverband Halbleiterphysik

HL 26: Poster II

HL 26.9: Poster

Mittwoch, 11. März 2026, 09:30–11:30, P1

Processing and Characterization of Mid Infrared Emitters from III-V Epitaxy — •Peter Zajac¹, Sascha R. Valentin¹, Timo A. Kurschat¹, Rainer Krage¹, Arne Ludwig², and Andreas D. Wieck³ — ¹Gesellschaft für Gerätebau mbH, Klönnestr. 99, 44143 Dortmund, Germany — ²Arbeitsbereich Epitaxie, Experimentalphysik VI, Ruhr-Universität Bochum, 44801 Bochum, Germany — ³ehem. Lehrstuhl für Angewandte Festköperphysik, Ruhr-Universität Bochum, 44801 Bochum, Germany

A layer structure optimized for mid-infrared emission, containing W-type quantum wells has been realized with III-V epitaxy on GaSb. The processing workflow presented here, from the MBE-grown wafer sample to an emitting device, includes mesa etching, photolithography and electrical contacting. The contribution outlines the challenges faced in progressing towards the first prototype, including the optimization of the wet-etching process with respect to the observed trench formation and surface roughness. The electrical characterization includes contact resistance and I-V measurements. Electroluminescence spectroscopy is performed for optical characterization.

Keywords: MBE; quantum well; mid infrared; LED; epitaxy