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HL: Fachverband Halbleiterphysik
HL 31: Materials and Devices for Quantum Technology I
HL 31.5: Vortrag
Mittwoch, 11. März 2026, 16:00–16:15, POT/0251
high-efficiency photonic interfaces for VV centres in silicon carbide — •Nien-Hsuan Lee1,2, Jonas Schmid1,2, Berke Demiralp3, Felix David1, Kevin Menguelti3, Stephan Kucera1, Eva Weig3,4,5, and Florian Kaiser1,2 — 1Luxembourg Institute of Science and Technology, Belval, Luxembourg — 2University of Luxembourg, Belval, Luxembourg — 3Technical University of Munich, Garching, Germany — 4Munich Center for Quantum Science and Technology, Munich, Germany — 5TUM Center for Quantum Engineering, Garching, Germany
In this work, we present a systematic investigation of etching processes aimed at optimising photonic structures for VV centres in bulk SiC. A wide range of fabrication parameters is explored, including metallic and non-metallic etch masks, plasma chemistries, and etching strategies to reduce surface and sidewall roughness while improving reproducibility. Structural and optical characterisation of the resulting waveguides enables identification of key loss mechanisms and the critical parameters governing high-efficiency photon transmission. Building on these process developments, we demonstrate a new generation of free-standing SiC waveguides with high wafer-scale uniformity and excellent reproducibility, enabling very high coupling efficiencies. Furthermore, we introduce a nanocone photonic structure in SiC, which simulations indicate can achieve more than a ten-fold enhancement in photon collection efficiency compared with unstructured bulk SiC. These results provide a scalable and reproducible photonic platform for wafer-scale integration of SiC colour centres for quantum communication.
Keywords: Silicon Carbide; Colour Centre; Nanofabrication