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HL: Fachverband Halbleiterphysik
HL 33: Nitrides I – Growth and fabrication
HL 33.1: Vortrag
Mittwoch, 11. März 2026, 16:30–16:45, POT/0006
Homoepitaxial growth of AlN by plasma-assisted molecular beam epitaxy — •Xin Du, Hossein Yazdani, and Yongjin Cho — Paul-Drude-Institut für Festkörperelektronik (PDI), Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5–7, 10117 Berlin, Germany
Wurtzite AlN can be considered an electrical insulator because of its ultrawide bandgap of 6.2 eV. However, it can become electrically active as either n-type or p-type through direct chemical doping or polarization doping when alloyed with the other group-III cations. This broad tunability in electrical conductivity, combined with its high thermal conductivity of about 340 W/m·K, makes AlN highly attractive for power electronics and deep-UV optoelectronic devices. Interest in AlN has considerably increased with the recent development of high-quality AlN bulk substrates with dislocation densities below 104 cm−2. To fully leverage the high structural quality of these substrates in subsequent epitaxial layers, the native oxide must be removed before growth. Although Al-assisted deoxidation of AlN substrates has recently been shown to be effective for MBE growth, achieving consistently complete oxide removal and subsequently high-quality AlN homoepitaxy remains challenging. In this talk, we show how various cleaning methods and MBE growth conditions influence AlN homoepitaxy. This work serves as a seeding study at PDI for future investigations aimed at achieving reliable doping control in AlN with minimized compensating defects.
Keywords: AlN homoepitaxy; Al-assisted surface cleaning; Plasma-assisted MBE