HL 33: Nitrides I – Growth and fabrication
Mittwoch, 11. März 2026, 16:30–17:45, POT/0006
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16:30 |
HL 33.1 |
Homoepitaxial growth of AlN by plasma-assisted molecular beam epitaxy — •Xin Du, Hossein Yazdani, and Yongjin Cho
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16:45 |
HL 33.2 |
Phase transition regions of epitaxially sputtered TiAlN layers on TiN and AlN buffer layers — •Emine Kaynar, Florian Hörich, Jürgen Bläsing, Fabian Großmann, Usha Velpuri, Armin Dadgar, André Strittmatter, and Arne Busse
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17:00 |
HL 33.3 |
Epitaxial Growth of ZrN on Si(111) — •Muthukani Kathiresan, Usha Velpuri, Arne Busse, Florian Hörich, Jürgen Bläsing, Armin Dadgar, and André Strittmatter
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17:15 |
HL 33.4 |
In-situ fabrication of In0.3Ga0.7N pseudo-substrates on GaN (0001) templates via a three-step protocol in plasma-assisted molecular beam epitaxy — •Huaide Zhang, Aidan Campbell, Jingxuan Kang, Jonas Lähnemann, Oliver Brandt, and Lutz Geelhaar
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17:30 |
HL 33.5 |
Influence of A-Site Cations on Structure, Defect Density and Photoactivity of Tantalum-Based Perovskite Oxynitride Photoelectrodes — •Gabriel Grötzner, Aleksandr Kochergov, Oliver Brune, Laura I. Wagner, Saswati Santra, Verena Streibel, and Ian D. Sharp
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