Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 34: Quantum Dots and Wires: Telecom Wavelength
HL 34.4: Vortrag
Mittwoch, 11. März 2026, 17:15–17:30, POT/0051
Integration of telecom C-band quantum dot-based single-photon emitters onto silicon photonic platform using micro-transfer printing — •Simon Oberle1, Ponraj Vijayan1, Alessandro Buzzi2, Hugo Larocque2, Michael Jetter1, Simone Luca Portalupi1, and Peter Michler1 — 1Institut für Halbleiteroptik und Funktionelle Grenzflächen (IHFG), University of Stuttgart — 2Research Laboratory of Electronics (RLE), Massachusetts Institute of Technology
Silicon photonics for telecommunications applications has garnered much attention recently. The optical transparency and the large refractive index contrast of silicon at telecommunication wavelengths allow the implementation of high-density photonic integrated circuits. One disadvantage of silicon photonics is the lack of mature deterministic light sources. One potential solution is the integration of III-V material, which offers outstanding optical emission properties, on a silicon platform. The direct growth of III-V materials on silicon the most scalable and therefore desired approach. However, it is challenging because of the material polarity difference and the lattice mismatch between GaAs and silicon. An alternative approach is the hybrid integration of III-V structures using micro-transfer printing, which enables integration of prefabricated devices onto silicon. Our group has previously developed telecom C-band emitting InAs quantum dots grown on InGaAs. Here, we report our approach to designing and fabricating structures for the hybrid integration of these QDs onto a silicon platform using micro-transfer printing.
Keywords: quantum dots; telecom C-band; hybrid integration; micro-transfer printing