Dresden 2026 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 35: Optical Properties II

HL 35.7: Vortrag

Mittwoch, 11. März 2026, 18:15–18:30, POT/0251

Photoluminescence of single color centers in hBN below the diffraction limit — •Iris Niehues¹, Daniel Wigger², Korbinian Kaltenecker³, Annika Klein-Hitpass¹, Johannes Binder⁴, Andrzej Wysmołek⁴, and Rainer Hillenbrand⁵ — ¹Institute of Physics, University of Münster, Germany — ²Department of Physics, University of Münster, Germany — ³Department of Physics, Ludwig-Maximilians-Universität München, Germany — ⁴Faculty of Physics, University of Warsaw, Poland — ⁵CIC nanoGUNE BRTA, Spain

Color Centers in hexagonal boron nitride (hBN) are promising quantum light sources due to their stable single-photon emission at room temperature. Using a scattering-type near-field optical microscope, we investigate photoluminescence (PL) properties of hBN grown via metalorganic vapor phase epitaxy. Our experiments employ the microscope in tapping mode to detect PL signals influenced by the metallic AFM tip. We demonstrate near-field optical excitation and emission via the tip's nanofocus, creating a sub-diffraction limited tip-enhanced (TE)PL hotspot [1]. Additionally, an "arc" forms around the emitter, explained by constructive interference between direct beams between the optics and the emitter and indirect beams scattered from the tip. This tip-assisted (TA)PL method can be used to map in-plane dipole orientations of hBN color centers at the nanoscale.

[1] I. Niehues et al., Nanophotonics 14(3), 335-342 (2025)

Keywords: hBN; near-field; photoluminescence; single-photon emitter