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HL: Fachverband Halbleiterphysik

HL 38: Materials and Devices for Quantum Technology II

HL 38.10: Vortrag

Donnerstag, 12. März 2026, 12:00–12:15, POT/0051

Optical probing of strain fields in isotopically pure Si-28 using donor-bound excitons — •Nico Eggeling1, Phillip Külper1, N.V. Abrosimov2, Jens Hübner1, and Michael Oestreich11Leibniz Universität Hannover, Germany — 2IKZ Berlin, Germany

The successful demonstration of all optical qubits in isotopically pure Si-28 utilises the donor-bound exciton transition of phosphorus dopants [1]. As a current obstacle for large-scale implementation, the challenge remains to harness inhomogeneities resulting from simple imperfections in the crystal lattice, over dopant-dependent lattice deformations, to even the hydrostatic pressure due to the sample’s own weight or adjacent interfaces. We present results from spatially resolved measurements of the donor-bound exciton, revealing a distinct strain distribution in a bulk Si-28 sample at cryogenic temperatures. These are explained in the context of the Pikus-Bir formalism for silicon [2], leading to strain estimates that are well matched to the known extrinsic factors.

[1] E.Sauter, PhD Thesis (2022)

[2] Loippo et al., Phys. Rev. Mater. 016202 (2023)

Keywords: Strain; Exciton; Silicon

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