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HL: Fachverband Halbleiterphysik
HL 38: Materials and Devices for Quantum Technology II
HL 38.7: Vortrag
Donnerstag, 12. März 2026, 11:15–11:30, POT/0051
Low-Loss LNOI PIC Components for Quantum Interference Applications — •Mohammad Malik1,2,3, Simon Palitza1,2,3, and Carsten Schuck1,2,3 — 1Department for Quantum Technology, University of Münster — 2Center for NanoTechnology - CeNTech, Münster — 3Center for Soft Nanoscience - SoN, Münster
Lithium niobate on insulator (LNOI) exhibits significant potential as a platform for integrated photonics owing to its strong electro-optic response, broad transparency window, and intrinsic nonlinear properties. For on-chip quantum key distribution (QKD) and related quantum photonic applications, the precise fabrication of photonic integrated circuit (PIC) components with minimal loss and high fidelity remains a key challenge. Here, we demonstrate directional couplers (DCs) and multimode interferometers (MMIs) that achieve a 50/50 splitting ratio with insertion losses below 1.5 dB at a wavelength of 1550 nm. These results are obtained using in-house fabrication techniques, including electron-beam lithography and inductively coupled plasma reactive ion etching, enabling accurate and reproducible realization of crucial PIC components. Building on these results, we will discuss progress towards integrating superconducting nanowire single-photon detectors (SNSPDs) on the LNOI platform for realizing on-chip Hong-Ou-Mandel interference as required for integrated quantum technology applications, including measurement device independent QKD.
Keywords: lithium niobate; photonics; quantum key distribution; on-chip detection; quantum technology