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HL: Fachverband Halbleiterphysik
HL 38: Materials and Devices for Quantum Technology II
HL 38.9: Vortrag
Donnerstag, 12. März 2026, 11:45–12:00, POT/0051
Strain modulation in Germanium: an overview for quantum applications — •Meera None1, Ignatii Zaitsev1, Davide Spirito2, Patricio Farrell3, Christian Merdon3, Yiannis Hadjimichale3, Daniel Fritsch4, Marvin Hartwig Zoellner1, and Costanza Lucia Manganelli1 — 1IHP-Frankfurt (Oder)-Germany — 2BC-Materials-Leioa, Spain — 3WIAS-Berlin — 4Zuse-Berlin
Germanium (Ge) is a promising platform for hole-based quantum devices due to its high hole mobility, strong spin-orbit coupling, and compatibility with CMOS technology. We investigate strain engineering in an ideal structure with two silicon nitride (SiN) stressors on a Ge substrate, using FEM to study how stress level, stressor height, and design influence mechanical deformation. The resulting strain tensors, including often neglected shear components, are inserted into a fully coupled 6x6 Bir-Pikus Hamiltonian to compute heavy hole (HH) and light hole (LH) band shifts under uniaxial and biaxial stress. Our results show tunable HH-LH splitting from 36 to 165 meV for SiN stressors between 1 and 4 GPa, demonstrating that SiN stressors offer a practical, scalable route to engineer Ge band structure for quantum wells and hole spin qubits.
Keywords: Meera; IHP; Physics; Semiconductor; Research